Resistance change memory device and associated methods

ABSTRACT

According to one embodiment, a memory device includes a resistance change memory element to which one of a low-resistance state and a high-resistance state is allowed to be set in accordance with a write current, a first transistor including a first gate, and causing a current to flow through the resistance change memory element in a first write period, a voltage holding section holding a first voltage applied to the first gate in the first write period, and a second transistor including a second gate, in which the first voltage held in the voltage holding section is applied to the second gate, thereby causing a current to flow through the resistance change memory element in a second write period after the first write period.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2019-168649, filed Sep. 17, 2019, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a memory device.

BACKGROUND

A memory device in which a resistance change memory element such as amagnetoresistive element is integrated on a semiconductor substrate hasbeen proposed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is schematic diagram showing a configuration of a memory deviceaccording to a first embodiment.

FIG. 2 is a schematic bird's eye view showing a basic configuration of amemory cell array area in the memory device according to the firstembodiment.

FIG. 3 is a schematic cross-sectional view showing an exemplaryconfiguration of a magnetoresistive element (resistance change memoryelement) included in a memory cell in the memory device according to thefirst embodiment.

FIG. 4 is a schematic diagram showing current-voltage characteristics ofa selector (switching element) included in a memory cell in the memorydevice according to the first embodiment.

FIG. 5 is a diagram showing a write operation during a first writeperiod of the memory device according to the first embodiment.

FIG. 6 is a diagram showing a write operation during a second writeperiod of the memory device according to the first embodiment.

FIG. 7 is schematic diagram showing a configuration of a memory deviceaccording to a second embodiment.

FIG. 8 is schematic diagram showing a configuration of a memory deviceaccording to a third embodiment.

FIG. 9 is a schematic bird's eye view showing a basic configuration of amemory cell array area in the memory device according to the thirdembodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a memory device includes: afirst resistance change memory element to which one of a firstlow-resistance state and a first high-resistance state is allowed to beset in accordance with a write current; a first transistor including afirst gate, a first source and a first drain and causing a current toflow through the first resistance change memory element in a first writeperiod; a voltage holding section holding a first voltage applied to thefirst gate in the first write period; and a second transistor includinga second gate, a second source and a second drain, in which the firstvoltage held in the voltage holding section is applied to the secondgate, thereby causing a current to flow through the first resistancechange memory element in a second write period after the first writeperiod.

Embodiments will be described below with reference to the accompanyingdrawings.

First Embodiment

FIG. 1 is schematic diagram showing a configuration of a memory device,namely, a semiconductor integrated circuit device according to a firstembodiment.

The memory device shown in FIG. 1 includes a memory cell array area 10,a local word line (LWL) selection circuit 20, a bit line (BL) selectioncircuit 30, a global word line (GWL) selection circuit 40, a firsttransistor 51, a second transistor 52 and a voltage holding section 53.

FIG. 2 is a schematic bird's eye view showing a basic configuration ofthe memory cell array area 10.

As shown in FIG. 2, the memory cell array area 10 includes a pluralityof memory cells MC, a plurality of word lines WL and a plurality of bitlines BL. Each of the memory cells MC is connected between itscorresponding word line WL and its corresponding bit line BL. Applying apredetermined voltage between a word line WL connected to a targetmemory cell MC and a bit line BL connected to the target memory cell MCto cause a predetermined current to flow makes it possible to write datato the target memory cell MC and read data therefrom. Each of the memorycells MC includes a magnetoresistive element (resistance change memoryelement) 101 and a selector (switching element) 102 connected in seriesto the magnetoresistive element (resistance change memory element) 101.

In the example shown in FIG. 2, the bit lines BL are provided on theupper-layer side of the word lines WL, but they may be provided on thelower-layer side of the word lines WL. In the example shown in FIG. 2,the selector 102 is provided on the upper-layer side of themagnetoresistive element 101, but it may be provided on the lower-layerside of the magnetoresistive element 101.

Returning to FIG. 1, the LWL selection circuit 20 selects a word line WLconnected to a target memory cell MC, and the BL selection circuit 30selects a bit line BL connected to a target memory cell MC. When avoltage is applied between the selected word line WL and the selectedbit line BL to cause a predetermined current to flow, data is written tothe target memory cell MC and data is read therefrom, as describedabove.

The GWL selection circuit 40 selects a target one from among a pluralityof LWL selection circuits 20.

FIG. 3 is a schematic cross-sectional view showing an exemplaryconfiguration of the magnetoresistive element (resistance change memoryelement) included in a memory cell MC. Note that the magnetoresistiveelement is also referred to as a magnetic tunnel junction (MTJ) element.

As shown in FIG. 3, the magnetoresistive element 101 includes a storagelayer (first magnetic layer) 101 a, a reference layer (second magneticlayer) 101 b, and a tunnel barrier layer (nonmagnetic layer)) 101 cprovided between the storage layer 101 a and the reference layer 101 b.

The storage layer 101 a is formed of a ferromagnetic layer having avariable magnetization direction. The reference layer 101 b is formed ofa ferromagnetic layer having a fixed magnetization direction. The tunnelbarrier layer 101 c is a nonmagnetic layer formed of an insulatingmaterial. Note that the variable magnetization direction means that themagnetization direction changes with a predetermined write current andthe fixed magnetization direction means that the magnetization directiondoes not change with a predetermined write current.

When the magnetization direction of the storage layer 101 a is parallelto that of the reference layer 101 b, the magnetoresistive element 101is brought into a low-resistance state. When the magnetization directionof the storage layer 101 a is antiparallel to that of the referencelayer 101 b, the magnetoresistive element 101 is brought into ahigh-resistance state. The magnetoresistive element 101 can thus storebinary data in accordance with the resistance state (low-resistancestate and high-resistance state). The resistance state (low-resistancestate and high-resistance state) of the magnetoresistive element 101 canbe set in accordance with the direction of a write current that flowsthrough the magnetoresistive element 101. In other words, the resistancestate is set to vary between the case where current flows from thestorage layer 101 a toward the reference layer 101 b and the case wherecurrent flows from the reference layer 101 b toward the storage layer101 a.

The example shown in FIG. 3 is directed to a bottom-freemagnetoresistive element in which the storage layer 101 a is located onthe lower-layer side than the reference layer 101 b, but a top-freemagnetoresistive element in which the storage layer 101 a is located onthe upper-layer side than the reference layer 101 b may be used. Themagnetoresistive element may further include a shift canceling layer tocancel a magnetic field to be applied to the storage layer 101 a fromthe reference layer 101 b.

FIG. 4 is a schematic diagram showing current-voltage characteristics ofthe selector (switching element) 102 included in a memory cell MC. Asthe selector 102, for example, a two-terminal switching element having aswitching function may be used.

If a voltage to be applied between two terminals is less than athreshold value, the switching element is in a “high-resistance” state,e.g., in an electrically non-conductive state. If a voltage to beapplied between two terminals is equal to or greater than a thresholdvalue, the switching element is in a “low-resistance” state, e.g., in anelectrically conductive state.

As shown in FIG. 4, the selector 102 has bidirectional (positive andnegative directions), mutually symmetric current-voltagecharacteristics. For example, in the current-voltage characteristic inthe positive direction, when a voltage between two terminals of theselector 102 increases and reaches a predetermined voltage V1, theselector 102 is turned on, the voltage between the two terminals shiftsto V2, and the current increases sharply. The same holds true for thecurrent-voltage characteristics in the negative direction. Note that theselector 102 may not necessarily have symmetric current-voltagecharacteristics.

Applying a voltage between a word line WL and a bit line BL to turn onthe selector 102 makes it possible to write data to the magnetoresistiveelement (resistance change memory element) 101 and read data therefrom.

Returning to FIG. 1, the first transistor 51 is an NMOS transistor whosegate and drain are diode-connected, and functions as a current-voltageconversion transistor (I-V conversion transistor). A constant-currentsource 61 is connected to the first transistor 51 to cause a constantcurrent to flow through the first transistor 51. More specifically,during a first write period, the current supplied from theconstant-current source 61 to the first transistor 51 is supplied to aselected memory cell MC through the GWL selection circuit 40, globalword line GWL, LWL selection circuit 20 and word line WL. During thefirst write period, therefore, a common current flows through the firsttransistor 51 and the magnetoresistive element 101 and selector 102 inthe selected memory cell MC.

The voltage holding section 53 holds a first voltage applied to the gateof the first transistor 51 during the first write period. As describedabove, a constant current flows between the drain and source of thefirst transistor 51 during the first write period. At this time, aswitch 62 is closed, and the voltage holding section 53 holds the firstvoltage applied to the gate of the first transistor 51.

The voltage holding section 53 is configured by a capacitor provided ata wiring (gate-to-gate wiring) between the gate of the first transistor51 and that of the second transistor 52. That is, as the capacitor ofthe voltage holding section 53, a capacitor element can be providedbetween the gate-to-gate wiring and the ground, and parasiticcapacitance of the gate-to-gate wiring can be used. The gate capacitanceof the transistor may also be used together with them.

The second transistor 52 is an NMOS transistor and functions as a clamptransistor in which the first voltage held in the voltage holdingsection 53 is applied to the gate and the voltage of the source isclamped based on the voltage applied to the gate during a second writeperiod after the first write period. Specifically, during the secondwrite period, the current supplied to the second transistor 52 issupplied to a selected memory cell MC through the transistor 63, globalbit line GBL, BL selection circuit 30 and bit line BL. That is, duringthe second write period, a common current flows through the secondtransistor 52 and the magnetoresistive element 101 and selector 102 inthe selected memory cell MC.

FIG. 5 is a diagram showing details of a write operation during thefirst write period.

During the first write period, the switch 62 is in an on state, thetransistor 63 is in an off state, a transistor 64 is in an on state, atransistor 65 is in an off state and a transistor 66 is in an on state.Accordingly, current I1 is supplied from the constant current source 61to the magnetoresistive element in a selected memory cell MC through thefirst transistor 51, transistor 66 and word line WL and then flows tothe ground through the bit line BL and the transistor 64. In addition,the voltage applied to the gate of the first transistor 51 is held inthe voltage holding section 53.

During the first write period, the magnetoresistive element in thememory cell MC is maintained in a low resistance state. Specifically,before the first write period, data is written in advance such that themagnetoresistive element is brought into a low-resistance state. Duringthe first write period, the direction of the current I1 flowing throughthe first transistor 51 and the magnetoresistive element coincides withthat of current flowing through the magnetoresistive element when themagnetoresistive element is set in a low-resistance state. During thefirst write period, the magnitude of the current I1 flowing through thefirst transistor 51 and the magnetoresistive element corresponds to thatof current which should flow through the magnetoresistive element whenthe magnetoresistive element is set in a high-resistance state. Themagnitude of the current I1 flowing through the magnetoresistive elementis equal to that of the current which should flow through themagnetoresistive element when the magnetoresistive element is set in ahigh-resistance state, but the direction of flow of the current I1coincides with that of the current flowing through the magnetoresistiveelement when the magnetoresistive element is set in a low-resistancestate. During the first write period, therefore, the magnetoresistiveelement is maintained in a low-resistance state.

FIG. 6 is a diagram showing details of a write operation during thesecond write period.

During the second write period, the switch 62 is in an off state, thetransistor 63 is in an on state, the transistor 64 is in an off state,the transistor 65 is in an on state and the transistor 66 is in an offstate. The voltage held in the voltage holding section 53 is applied tothe gate of the second transistor 52. Accordingly, current I2 issupplied from a predetermined power supply to the magnetoresistiveelement in a selected memory cell MC through the second transistor 52,transistor 63 and bit line BL and then flows to the ground through theword line WL and the transistor 65.

As described above, during the second write period, the voltage held inthe voltage holding section 53 is applied to the gate of the secondtransistor 52. The level of the voltage held in the voltage holdingsection 53 is the same as that of the voltage applied to the gate of thefirst transistor 51 during the first write period. In addition, thefirst and second transistors 51 and 52 have the same current-voltagecharacteristics, and the selector connected in series to themagnetoresistive element has a bidirectionally symmetricalcurrent-voltage characteristics. In the initial stage of the secondwrite period, the magnetoresistive element in the memory cell MC ismaintained in a low-resistance state as during the first write period.In the initial stage of the second write period, therefore, themagnitude of the current I2 flowing through the second transistor 52 andthe magnetoresistive element is equal to that of the current I1 flowingthrough the first transistor 51 and the magnetoresistive element duringthe first write period. However, the direction of the current I1 flowingthrough the first transistor 51 and the magnetoresistive element duringthe first write period is opposite to that of the current I2 flowingthrough the second transistor 52 and the magnetoresistive element duringthe second write period. As has been described, the magnitude of thecurrent I1 flowing through the magnetoresistive element during the firstwrite period is equal to that of current which should flow through themagnetoresistive element when the magnetoresistive element is set in ahigh-resistance state. The direction of the current I2 flowing throughthe magnetoresistive element during the second write period coincideswith that of current flowing through the magnetoresistive element whenthe magnetoresistive element is set in a high-resistance state. Duringthe second write period, therefore, the magnetoresistive element shiftsfrom the low-resistance state to the high-resistance state.

As can be seen from the above description, during the second writeperiod, the source voltage of the second transistor 52, which is clampedby the second transistor 52, is applied to a memory cell MC, and themagnetoresistive element is set in a high-resistance state. After themagnetoresistive element is set in the high-resistance state during thesecond write period, the current flowing through the second transistor52 and the magnetoresistive element decreases, and the source voltageclamped by the second transistor 52 is maintained. Since, furthermore,the selector connected in series to the magnetoresistive element is inan on state, an almost constant voltage is applied to the selector.Therefore, even after the magnetoresistive element shifts from thelow-resistance state to the high-resistance state, the voltage appliedto the magnetoresistive element is maintained at a constant valuewithout increasing.

As described above, in the first embodiment, the voltage applied to thegate of the first transistor 51 during the first write period is held inthe voltage holding section 53, and the voltage held in the voltageholding section 53 is applied to the gate of the second transistor 52during the second write period. Performing the write operation asdescribed above makes it possible to perform a constant-voltage write tothe magnetoresistive element (resistance change memory element) duringthe second write period. When a constant-current write is performedinstead of the constant-voltage write, a high voltage is applied to themagnetoresistive element when the magnetoresistive element shifts fromthe low-resistance state to the high-resistance state, which mayadversely affect the reliability of the magnetoresistive element and thelike. In the first embodiment, the above constant-voltage write makes itpossible to reduce adverse effects on the magnetoresistive element whena write operation is performed to set the magnetoresistive element inthe high-resistance state and to perform an appropriate write to themagnetoresistive element.

Since, furthermore, the foregoing constant-voltage write can beperformed using the first and second transistors 51 and 52 in the firstembodiment, a large-scale circuit such as an operational amplifier neednot be used. A constant-voltage write can thus be performed by a smallcircuit scale. Accordingly, for example, a write circuit can be placedto correspond to the memory cell array area 10. As shown in FIG. 1, forexample, the second transistor 52 can be placed to correspond to thememory cell array area 10. It is therefore possible to suppress IR drop,RC delay and the like in a write pass and thus perform a reliable writeoperation at high speed.

Second Embodiment

Next is a description of a second embodiment. Note that the basicmatters of the second embodiment are similar to those of the foregoingfirst embodiment and thus their descriptions will be omitted.

FIG. 7 is schematic diagram showing a configuration of a memory device(semiconductor integrated circuit device) according to the secondembodiment. Note that components like those shown in FIG. 1 are denotedby like reference numerals and reference symbols.

In the foregoing first embodiment, an NMOS transistor is used for eachof the first and second transistors 51 and 52. In the second embodiment,however, a PMOS transistor is used for each of the first and secondtransistors 51 and 52. Thus, the write direction of the secondembodiment is opposite to that of the first embodiment during both thefirst and second write periods.

Specifically, in the second embodiment, the current supplied to themagnetoresistive element (resistance change memory element) flowsthrough the first transistor 51 during the first write period, and thecurrent supplied to the magnetoresistive element flows through thesecond transistor 52 during the second write period. The other basicoperations are similar to those of the first embodiment and thus theirdescriptions will be omitted.

As described above, the basic configuration and basic operation of thesecond embodiment are similar to those of the first embodiment, andadvantageous effects similar to those of the first embodiment can beobtained from the second embodiment.

Third Embodiment

Next is a description of a third embodiment. Note that the basic mattersof the third embodiment are similar to those of the foregoing firstembodiment and thus their descriptions will be omitted.

FIG. 8 is schematic diagram showing a configuration of a memory device(semiconductor integrated circuit device) according to the thirdembodiment. Note that components like those shown in FIG. 1 are denotedby like reference numerals and reference symbols.

In the third embodiment, a first switch 71 is provided between the gate(first gate) and drain (first drain) of the first transistor 51, and asecond switch 72 is provided between the gate (second gate) and drain(second drain) of the second transistor 52. With this configuration,each of the first and second transistors 51 and 52 can have differentfunctions.

FIG. 9 is a schematic bird's eye view showing a basic configuration ofthe memory cell array area 10 of the third embodiment.

As shown in FIG. 9, in the third embodiment, two memory cells MC1 andMC2 are provided at corresponding positions in the memory cell arrayarea 10. Specifically, a first memory cell MC1 is provided between aword line WL and a first bit line BL, and a second memory cell MC2 isprovided between the word line WL and a second bit line BL2. The basicconfiguration of each of the memory cells MC1 and MC2 is similar to thatof the memory cell MC of the first embodiment. The first memory cell MC1includes a first magnetoresistive element (first resistance changememory element) 111 and a first selector (first switching element) 112,and the second memory cell MC2 includes a second magnetoresistiveelement (second resistance change memory element) 121 and a secondselector (second switching element) 122. The basic configuration of eachof the magnetoresistive elements (resistance change memory elements) 111and 121 is similar to that of the magnetoresistive element (resistancechange memory element) 101 of the first embodiment, and the basicconfiguration of each of the selectors (switching elements) 112 and 122is also similar to that of the selector (switching element) 102 of thefirst embodiment 1.

As shown in FIG. 9, in the third embodiment, the first bit line BL1 isprovided on the upper-layer side of a word line WL and the second bitline BL2 is provided on the lower-layer side of the word line WL. Theorder in which the storage layer, tunnel barrier layer and referencelayer are stacked one on another in the first magnetoresistive element111 is the same as the order in which the storage layer, tunnel barrierlayer and reference layer are stacked one on another in the secondmagnetoresistive element 121. It is thus necessary to make the currentdirection of a write circuit in the first magnetoresistive element 111and that of the write circuit in the second magnetoresistive element 121opposite to each other. In the third embodiment, therefore, the firstand second switches 71 and 72 are provided to perform the followingoperations.

In the third embodiment, the switch 71 is closed and the switch 72 isopen during the first and second write periods. That is, the firsttransistor (NMOS transistor) 51 functions as a current-voltageconversion transistor (I-V conversion transistor) with a diodeconnection, and the second transistor 52 (NMOS transistor) functions asa clamp transistor. Thus, an operation similar to that of the firstembodiment described above is performed during the first and secondwrite periods. As a result, data is written to the magnetoresistiveelement in the selected memory cell MC. Specifically, data is written tothe first magnetoresistive element 111 in the first memory cell MC1.

In the third embodiment, the switch 71 is open and the switch 72 isclosed during a third write period and a fourth write period after thethird write period. Therefore, unlike during the first and second writeperiods, the second transistor 52 functions as a current-voltageconversion transistor with a diode connection, and the first transistor51 functions as a clamp transistor.

Below is a specific description of an operation to be performed duringthe third and fourth write periods.

During the third write period, a current common to the current suppliedfrom the constant current source 61 to the second transistor 52 flowsthrough the second magnetoresistive element 121 and second selector 122in a selected memory cell MC2. More specifically, the current suppliedfrom the constant current source 61 to the second transistor 52 issupplied to the second magnetoresistive element 121 in the selectedsecond memory cell MC2 through the transistor 63, global bit line GBL,BL selection circuit 30 and bit line BL. The current supplied to thesecond magnetoresistive element 121 flows to the ground through the wordline WL, LWL selection circuit 20, global word line GWL, GWL selectioncircuit 40 and transistor 65. As a result, data is written to the secondmagnetoresistive element 121 in the second memory cell MC2. In addition,the voltage applied to the gate of the second transistor 52 is held inthe voltage holding section 53.

The basic write principle in the third write period is similar to thatin the first write period described in the first embodiment. That is,write is performed in advance such that the second magnetoresistiveelement 121 is brought into a low-resistance state before the thirdwrite period. During the third write period, the direction of currentflowing through the second transistor 52 and the second magnetoresistiveelement 121 coincides with that of current flowing through the secondmagnetoresistive element 121 when the second magnetoresistive element121 is set in a low-resistance state. Also, during the third writeperiod, the magnitude of current flowing through the second transistor52 and the second magnetoresistive element 121 corresponds to that ofcurrent which should flow through the second magnetoresistive element121 when the second magnetoresistive element 121 is set in ahigh-resistance state. During the third write period, therefore, thesecond magnetoresistive element 121 is maintained in a low-resistancestate.

During the fourth write period, the voltage held in the voltage holdingsection 53 is applied to the gate of the first transistor 51.Accordingly, a current common to the current supplied from the constantcurrent source 61 to the first transistor 51 flows through the secondmagnetoresistive element 121 and second selector 122 in the selectedsecond memory cell MC2. More specifically, the current supplied from theconstant current source 61 to the first transistor 51 is supplied to thesecond magnetoresistive element 121 in the selected second memory cellMC2 through the GWL selection circuit 40, global word line GWL, LWLselection circuit 20 and word line WL. The current supplied to thesecond magnetoresistive element 121 flows to the ground through the bitline BL, BL selection circuit 30, global bit line GBL and transistor 64.As a result, data is written to the second magnetoresistive element 121in the selected second memory cell MC2.

The basic write principle in the fourth write period is similar to thatin the second write period described in the first embodiment. That is,in the initial stage of the fourth write period, the secondmagnetoresistive element 121 is maintained in a low-resistance state,and the magnitude of current flowing through the first transistor 51 andthe second magnetoresistive element 121 is equal to that of currentflowing through the second transistor 52 and the second magnetoresistiveelement 121 during the third write period. However, the direction ofcurrent flowing through the second transistor 52 and the secondmagnetoresistive element 121 during the third write period is oppositeto that of current flowing through the first transistor 51 and thesecond magnetoresistive element 121 during the fourth write period.During the fourth write period, therefore, the second magnetoresistiveelement 121 shifts from the low-resistance state to the high-resistancestate.

During the fourth write period, the source voltage clamped by the firsttransistor 51 is applied to the second memory cell MC2 in the samemanner as described in the first embodiment, and the voltage applied tothe second magnetoresistive element 121 is maintained at a constantvalue without increasing even after the second magnetoresistive element121 shifts from the low-resistance state to the high-resistance state.

As described above, the basic configuration and basic operation of thethird embodiment are similar to those of the first embodiment, andadvantageous effects similar to those of the first embodiment can beobtained from the third embodiment.

Furthermore, in the third embodiment, the first and second switches 71and 72 make it possible to cause the first and second transistors 51 and52 to have different functions. Two memory cells MC are thereforeconnected to a common word line WL and, in other words, even when twomagnetoresistive elements (resistance change memory elements) 111 and121 are connected to a common word line WL, appropriate write can beperformed.

In the first, second and third embodiments, a magnetoresistive elementin which different resistance states (low-resistance and high-resistancestates) are set according to a direction in which a write current flowsis used as a resistance change memory element, but a resistance changememory element in which different resistance states (low-resistance andhigh-resistance states) are set in the same write direction can also beused. For example, a phase change memory (PCM) element can be used as aresistance change memory element.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A memory device comprising: a first resistancechange memory element to which one of a first low-resistance state and afirst high-resistance state is allowed to be set in accordance with awrite current; a first transistor including a first gate, a first sourceand a first drain and causing a current to flow through the firstresistance change memory element in a first write period; a voltageholding section holding a first voltage applied to the first gate in thefirst write period; and a second transistor including a second gate, asecond source and a second drain, in which the first voltage held in thevoltage holding section is applied to the second gate, thereby causing acurrent to flow through the first resistance change memory element in asecond write period after the first write period, wherein the voltageholding section includes a capacitor provided at a wiring between thefirst gate and the second gate.
 2. The memory device of claim 1,wherein: the first resistance change memory element is maintained in thefirst low-resistance state in the first write period; a direction ofcurrent flowing through the first transistor and the first resistancechange memory element in the first write period coincides with adirection of current flowing through the first resistance change memoryelement when the first resistance change memory element is set to thefirst low-resistance state; and a magnitude of current flowing throughthe first transistor and the first resistance change memory element inthe first write period corresponds to a magnitude of current whichallows the first resistance change memory element to be set to the firsthigh-resistance state.
 3. The memory device of claim 1, wherein: thefirst transistor functions as a current-voltage conversion transistor inwhich the first gate and the first drain are connected to each other inthe first write period; and the second transistor functions as a clamptransistor in which a voltage of the second source is clamped based on avoltage applied to the second gate in the second write period.
 4. Thememory device of claim 3, wherein: a constant voltage based on thevoltage of the second source clamped by the second transistor is appliedto the first resistance change memory element and the first resistancechange memory element is set to the first high-resistance state in thesecond write period.
 5. The memory device of claim 1, wherein: adirection of current flowing through the first transistor and the firstresistance change memory element in the first write period and adirection of current flowing through the second transistor and the firstresistance change memory element in the second write period are oppositeto each other.
 6. The memory device of claim 1, wherein: the firsttransistor and the second transistor are both NMOS transistors; thecurrent flowing through the first transistor is supplied to the firstresistance change memory element in the first write period; and thecurrent flowing through the second transistor is supplied to the firstresistance change memory element in the second write period.
 7. Thememory device of claim 1, wherein: the first transistor and the secondtransistor are both PMOS transistors; the current supplied to the firstresistance change memory element flows through the first transistor inthe first write period; and the current supplied to the first resistancechange memory element flows through the second transistor in the secondwrite period.
 8. The memory device of claim 1, wherein: the firstresistance change memory element is a magnetoresistive element.
 9. Thememory device of claim 1, further comprising: a first switching elementwhich is connected in series to the first resistance change memoryelement and through which a current common to the current flowingthrough the first resistance change memory element flows.
 10. The memorydevice of claim 1, further comprising: a second resistance change memoryelement to which one of a second low-resistance state and a secondhigh-resistance state is allowed to be set in accordance with a writecurrent; a first switch provided between the first gate and the firstdrain; and a second switch provided between the second gate and thesecond drain, wherein: the first switch is closed and the second switchis open in the first and second write periods; the first switch is openand the second switch is closed in a third write period, and a commoncurrent flows through the second transistor and the second resistancechange memory element; the voltage holding section holds a secondvoltage applied to the second gate in the third write period; and thefirst switch is open and the second switch is closed in a fourth writeperiod after the third write period, the second voltage held in thevoltage holding section is applied to the first gate, and a commoncurrent flows through the first transistor and the second resistancechange memory element.
 11. The memory device of claim 10, wherein: thesecond resistance change memory element is maintained in the secondlow-resistance state in the third write period; and a direction ofcurrent flowing through the second transistor and the second resistancechange memory element in the third write period coincides with adirection of current flowing through the second resistance change memoryelement when the second resistance change memory element is set to thesecond low-resistance state; a magnitude of current flowing through thesecond transistor and the second resistance change memory element in thethird write period corresponds to a magnitude of current which allowsthe second resistance change memory element to be set to the secondhigh-resistance state.
 12. The memory device of claim 10, wherein: thesecond transistor functions as a current-voltage conversion transistorin which the second gate and the second drain are connected to eachother in the third write period; and the first transistor functions as aclamp transistor in which a voltage of the first source is clamped basedon a voltage applied to the first gate in the fourth write period. 13.The memory device of claim 12, wherein: a constant voltage based on thevoltage of the first source clamped by the first transistor is appliedto the second resistance change memory element and the second resistancechange memory element is set to the second high-resistance state in thefourth write period.
 14. The memory device of claim 10, wherein: adirection of current flowing through the second transistor and thesecond resistance change memory element in the third write period and adirection of current flowing through the first transistor and the secondresistance change memory element in the fourth write period are oppositeto each other.
 15. The memory device of claim 10, wherein: the secondresistance change memory element is a magnetoresistive element.
 16. Thememory device of claim 10, further comprising: a second switchingelement which is connected in series to the second resistance changememory element and through which a current common to the current flowingthrough the second resistance change memory element flows.